An Improved 2.5 GHz Electron Pump: Single-Electron Transport through Shallow-Etched Point Contacts Driven by Surface Acoustic Waves
P. Utko, K. Gloos, J.B. Hansen and P.E. Lindelof
Nano-Science Center, Niels Bohr Institute fAFG, University of Copenhagen, Universitetsparken 5, 2100 Copenhagen, Denmark
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We present an experimental study of a 2.5 GHz electron pump based on the quantized acoustoelectric current driven by surface acoustic waves through a shallow-etched point contact in a GaAs/AlGaAs heterostructure. At low temperatures and with an additional counter-propagating surface acoustic waves beam, up to n=20 current plateaus at I=nef could be resolved, where n is an integer, e the electron charge, and f the surface acoustic waves frequency. In the best case the accuracy of the first plateau at 0.40 nA was estimated to be ΔI/I=±25ppm over 0.25mV in gate voltage, which is better than previous results.
DOI: 10.12693/APhysPolA.103.533
PACS numbers: 73.63.Kv, 72.50.+b, 06.20.Jr