Magnetotransport through Nanoconstriction in Ferromagnetic Semiconductor (Ga,Mn)As
T. Figielski a , T. Wosiński a , O. Pelya a , J. Sadowski a,b , A. Morawski a , A. M±kosa a , W. Dobrowolski a , J. Jagielski c and J. Wróbel a
a Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland
b Max-lab, Lund University, 22100 Lund, Sweden
c Institute of Electronic Materials Technology, 01-919 Warszawa, Poland
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We studied narrow (submicron) constrictions in the layers of ferromagnetic semiconductor (Ga,Mn)As. We have demonstrated a contribution of the quantum localization effects to the magnetoresistance of the constricted samples. We have also found a negative contribution of a domain wall trapped in the constriction to the resistance, due presumably to the erasing of the localization effects by the domain wall.
DOI: 10.12693/APhysPolA.103.525
PACS numbers: 73.63.--b, 75.60.--d, 73.20.Fz