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Magnetotransport through Nanoconstriction in Ferromagnetic Semiconductor (Ga,Mn)As |
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T. Figielski
a
, T. Wosiński
a
, O. Pelya
a
, J. Sadowski
a,b
, A. Morawski
a
, A. M±kosa
a
, W. Dobrowolski
a
, J. Jagielski
c
and J. Wróbel
a
a Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland b Max-lab, Lund University, 22100 Lund, Sweden c Institute of Electronic Materials Technology, 01-919 Warszawa, Poland |
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| We studied narrow (submicron) constrictions in the layers of ferromagnetic semiconductor (Ga,Mn)As. We have demonstrated a contribution of the quantum localization effects to the magnetoresistance of the constricted samples. We have also found a negative contribution of a domain wall trapped in the constriction to the resistance, due presumably to the erasing of the localization effects by the domain wall. |
| PACS numbers: 73.63.--b, 75.60.--d, 73.20.Fz |