Near-Band-Edge Photoluminescence from Very High Quality Hexagonal ZnO Bulk Crystals
N.T.T. Lieu, D.H. Dat and N.Q. Liem
Institute of Materials Science, NCST of Vietnam, 18 Hoang Quoc Viet -- Cau Giay -- Hanoi, Vietnam
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Received: September 24, 2002
The near-band-edge photoluminescence spectra of very high quality hexagonal ZnO single crystals in the temperature range between 9 and 305 K were measured. Based on the energetic positions and the evolutions of well-resolved photoluminescence lines with temperature and with excitation power density we interpret the observed photoluminescence lines as resulting from recombination of the free-exciton, bound-exciton, biexciton, inelastic exciton--exciton collision and electron--hole plasma.
DOI: 10.12693/APhysPolA.103.67
PACS numbers: 71.35.--y, 78.55.--m, 78.55.Et