Numerical Simulation of Current Dependence on Well Widths in AlGaAs/GaAs/AlGaAs Double Barrier Diode Structures
A.H. Rezvani
Department of Physics, Tarbiat Modarres University, Tehran, Iran and The Center for Theoretical Physics and Mathematics, AEOI P.O. Box 14155-1339, Iran
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Received: June 7, 2002; revised version November 14, 2002
A numerical procedure based on the time-dependent Kohn--Sham equation with an improved boundary condition for the modeling double barrier resonant tunneling diode is presented. The dependence of current components on well widths in AlGaAs/GaAs/AlGaAs structure is studied. An oscillatory behavior was observed as the width of the well is changed. Our evaluation shows that this oscillation cannot attribute to the well-known oscillation at resonance state.
DOI: 10.12693/APhysPolA.103.47
PACS numbers: 73.63.Hs, 71.15.Mb, 71.10.Ca