EPR of Vanadyl Ion Impurities in Single Crystals of RbHC2O4 |
| V. Singh and V.K. Jain Department of Physics, M.D. University, Rohtak-124001, India |
| Received: June 10, 2002 |
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| The EPR of VO2+ in RbHC2O4 single crystals has been studied in X-band at 290 K. Three sites have been observed. VO2+ enters the lattice at substitutional and interstitial sites. Spin-Hamiltonian parameters are evaluated. |
| DOI: 10.12693/APhysPolA.102.795 PACS numbers: 76.30.Fc |