Magnetic Properties of Short Period InGaMnAs/InGaAs Superlattices

J. Sadowskia,b,c, R. Mathieud, P. Svedlindhd, J. Kanskib, M. Karlsteenb, K. Świątekc and J.Z. Domagałac aNiels Bohr Institute, Copenhagen University, 2100 Copenhagen, Denmark bChalmers University of Technology, 412 96 Göteborg, Sweden cInstitute of Physics, Polish Academy of Sciences al. Lotników 32/46, 02-668 Warszawa, Poland dUppsala University, Department of Materials Science 751 21 Uppsala, Sweden

Full Text PDF

We have observed a paramagnetic-to-ferromagnetic phase transition in short period InGaMnAs/InGaAs superlattices. The thicknesses of magnetic InGaMnAs layers in the structures studied was chosen to be 4 or 8 molecular layers (12 A or 24 A). The non-magnetic InGaAs spacer layers are 12 A thick. The composition (In content) in InGaMnAs and InGaAs was chosen in such a way that magnetic layers were: deep potential wells, high potential barriers, or shallow potential wells. For superlattices with 8 monolayer thick InGaMnAs magnetic layers and 4 monolayer thick InGaAs non-magnetic spacers the temperatures of paramagnetic-to-ferromagnetic phase transition do not depend on the band offsets between InGaMnAs and InGaAs adjusted by the In content.

DOI: 10.12693/APhysPolA.102.687 PACS numbers: 75.75.+a, 75.50.Pp, 75.25.+z