Correlated Doping in Semiconductors: The Role of Donors in III--V Diluted Magnetic Semiconductors
J. Maseka, I. Turekb, V. Drchala, J. Kudrnovskya and F. Macaa
aInstitute of Physics, AS CR, Na Slovance 2, 182 21 Prague 8, Czech Republic
bInstitute of Physics of Materials, AS CR, Zizkova 22, 616 62 Brno and Faculty of Mathematics and Physics, Charles University, Prague, Czech Republic
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We investigate the compositional dependence of the total energy of the mixed crystals (Ga,Mn)As co-doped with As, Sn, and Zn. Using the ab initio linear muffin-tin orbital coherent potential approximation method we find a correlation between the incorporation of acceptors (Mn, Zn) and donors (Sn, antisite As). In particular, the formation energy of AsGa is reduced by approximately 0.1 eV in the presence of Mn, and vice versa. This leads to the self-compensating behavior of (Ga,Mn)As.
DOI: 10.12693/APhysPolA.102.673
PACS numbers: 71.15.Ap, 71.20.Nr, 71.55.Eq, 75.50.Pp