ACTA

Control of Ferromagnetism in Cd_1-xMn_xTe Based Quantum Wells

M. Bertolini^a, H. Boukari^a, D. Ferrand^a, J. Cibert^a, S. Tatarenko^a, B. Gilles^b, W. Maślana^c, P. Kossacki^c, J.A. Gaj^c and T. Dietl^d
^aLaboratoire de Spectrometrie Physique CNRS-Universite Joseph Fourier Grenoble BP 87, 38402 Saint Martin d'Heres, France
^bLaboratoire de Thermodynamique et Physico-Chimie Metallurgiques CNRS BP 75, 38042 St Martin d'Heres, France
^cInstitute of Experimental Physics, Warsaw University, 69 Hoża, 00-681 Warsaw, Poland
^dInstitute of Physics, Polish Academy of Sciences al. Lotników, 02-668 Warsaw, Poland

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New structures aiming at controlling the ferromagnetic properties of diluted magnetic semiconductor quantum wells are presented. The carrier density is controlled by applying a voltage across a p-i-n diode. A new method, creating a 2D hole gas by adjusting the distance between the quantum well and surface, offers opportunities for a broader range of structures.

DOI: 10.12693/APhysPolA.102.603
PACS numbers: 75.30.Hx, 75.50.Dd, 75.50.Pp, 78.55.Et