Effect of Hydrostatic Pressure on Photoluminescence Spectra from Structures with Si Nanocrystals Fabricated in SiO2 Matrix |
K.S. Zhuravleva, I.E. Tyschenkoa, E.N. Vandysheva, N.V. Bulytovaa, A. Misiukb, L. Rebohlec and W. Skorupac aInstitute of Semiconductor Physics Pr. Lavrentieva, 13, Novosibirsk, 630090, Russia bInstitute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland cInstitute of Ion Beam Physics and Materials Research Research Center Rossendorf, Inc., POB 510119, 01314 Dresden, Germany |
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The effect of hydrostatic pressure applied at high temperature on photoluminescence of Si-implanted SiO2 films was studied. A ``blue''-shift of PL spectrum from the SiO2 films implanted with Si+ ions to total dose of 1.2x1017cm-2 with an increase in hydrostatic pressure was observed. For the films implanted with Si+ ions to a total dose of 4.8x1016cm-2 high temperature annealing under high hydrostatic pressure (12 kbar) causes a ``red''-shift of photoluminescence spectrum. The ``red'' photoluminescence bands are attributed to Si nanocrystals while the ``blue'' ones are related to Si nanocrystals of reduced size or chains of silicon atoms or ≡Si--Si≡ defects. A decrease in size of Si nanocluster size occurs in result of the pressure-induced decrease in the diffusion of silicon atoms. |
DOI: 10.12693/APhysPolA.102.337 PACS numbers: 68.55.Ac, 73.63.Bd, 78.67.--n, 68.35.Fx |