Effect of Hydrostatic Pressure on Photoluminescence Spectra from Structures with Si Nanocrystals Fabricated in SiO2 Matrix
K.S. Zhuravleva, I.E. Tyschenkoa, E.N. Vandysheva, N.V. Bulytovaa, A. Misiukb, L. Rebohlec and W. Skorupac
aInstitute of Semiconductor Physics Pr. Lavrentieva, 13, Novosibirsk, 630090, Russia
bInstitute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
cInstitute of Ion Beam Physics and Materials Research Research Center Rossendorf, Inc., POB 510119, 01314 Dresden, Germany
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The effect of hydrostatic pressure applied at high temperature on photoluminescence of Si-implanted SiO2 films was studied. A ``blue''-shift of PL spectrum from the SiO2 films implanted with Si+ ions to total dose of 1.2x1017cm-2 with an increase in hydrostatic pressure was observed. For the films implanted with Si+ ions to a total dose of 4.8x1016cm-2 high temperature annealing under high hydrostatic pressure (12 kbar) causes a ``red''-shift of photoluminescence spectrum. The ``red'' photoluminescence bands are attributed to Si nanocrystals while the ``blue'' ones are related to Si nanocrystals of reduced size or chains of silicon atoms or ≡Si--Si≡ defects. A decrease in size of Si nanocluster size occurs in result of the pressure-induced decrease in the diffusion of silicon atoms.
DOI: 10.12693/APhysPolA.102.337
PACS numbers: 68.55.Ac, 73.63.Bd, 78.67.--n, 68.35.Fx