High-Frequency Noise Sources in Quantum Wells
L. Ardaravicius, J. Liberis and A. Matulionis
Semiconductor Physics Institute, 11 A. Gostauto, Vilnius 2600, Lithuania
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Hot-electron noise is investigated for InGaAs and InAs quantum wells containing a two-dimensional electron gas channel in a pulsed electric field applied parallel to the interfaces. Noise sources resulting from hot-electron ``thermal'' motion, electron temperature fluctuations, and real-space transfer are observed. The experimental results on hot-electron ``thermal'' noise are used to estimate energy relaxation time in the field range where other sources do not play any important role. Measurements of noise anisotropy in the plane of electron confinement are used to discuss real-space-transfer noise. High-frequency noise technique is used to study hot-electron trapping, and trap location in InAlAs/InGaAs/InAlAs heterostructure channels is determined.
DOI: 10.12693/APhysPolA.102.329
PACS numbers: 72.20.Ht, 72.70.+m, 73.40.Kp