Nanostructure of Si--Ge Near-Surface Layers Produced by Ion Implantation and Laser Annealing
D. Klinger, S. Kret, J. Auleytner and D. Żymierska
Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
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An annealing with the nanosecond laser light pulse is applied for crystal lattice reconstruction of a disturbed near-surface layer, which was created in semiconductor material as a result of the implantation process. Radiation with energy density higher than the threshold value causes the melting of the surface layer and then the epitaxial recrystallization from the melt on a different substrate. Structural changes occurring in the Ge implanted Si crystals after annealing with different energy densities are investigated by means of the cross-section high-resolution transmission electron microscopy.
DOI: 10.12693/APhysPolA.102.259
PACS numbers: 61.72.Cc, 61.72.Ff, 61.72.Ji, 61.72.Nn, 61.80.Ba