X-ray Synchrotron Studies of Nanostructure Formation in High Temperature --- Pressure Treated Silicon Implanted with Hydrogen
K. Wieteskaa, W. Wierzchowskib, W. Graeffc, A. Misiukd, A. Barczd, L. Bryjae and V.P. Popovf
aInstitute of Atomic Energy, 05-400 Otwock-¦wierk, Poland
bInstitute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
cHASYLAB at DESY, Notkestrasse 85, 22603 Hamburg, Germany
d Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
eWroc³aw Technical University, Wyb. Wyspiańskiego 27, 53-370 Wroc³aw, Poland
fInstitute of Semiconductor Physics, RAS Lavrentieva 13, 630090 Novosibirsk, Russia
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The effects of various high temperature--pressure treatments in Czochralski grown silicon (Cz--Si) implanted with 130 keV hydrogen to the dose of 4x1016cm-2 were investigated using synchrotron X-ray topographic methods and rocking curve measurements. The high temperature - pressure processes included 10 h annealing at 450°C, 650°C, and 725°C at argon pressure 12 kbar and 1 bar. The topographic investigations were performed with projection and section methods in back-reflection and transmission geometry. It was found that annealing resulted in significantly reduced strain induced by the implantation, which became undetectable with presently used very sensitive synchrotron arrangement. A significant difference between the Cz--Si:H samples annealed at high and atmospheric pressure was observed. In the first case a distinct topographic contrast attributed to the formation of comparatively larger inclusions was observed. This effect was different at different temperatures. The samples annealed at enhanced pressure were more uniform and often produced significant interference effects.
DOI: 10.12693/APhysPolA.102.239
PACS numbers: 68.55.--a, 61.46.+w