ACTA

Study of Si-Implanted and Thermally Annealed Layers of Silicon by Using X-ray Grazing Incidence Methods

D. Klinger^a, M. Lefeld-Sosnowska^b, J.B. Pełka^a, W. Paszkowicz^a, P. Gierłowski^a and P. Pankowski^a
^aInstitute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
^bInstitute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

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This paper reports on the study of structural modifications induced by the implantation process and by the subsequent thermal annealing in near-surface layers of Si single crystals implanted with Si²⁺ ions of energy 140 keV and doses from 1x10¹⁵ to 1x10¹⁶ ions/cm². The grazing incidence X-ray diffraction and X-ray reflectivity measurements were applied to determine the thickness and structural composition of the damaged layers. The fitted electron density profiles indicated an existence of an interfacial layer with density higher than the density of Si matrix or near-surface oxide layer. Formation of polycrystalline phases of silicon and silicon oxides is discussed in dependence on the conditions of annealing treatment and implantation dose.

DOI: 10.12693/APhysPolA.101.795
PACS numbers: 61.10.-i, 61.10.Kw, 61.72.Tt, 68.35.Fx, 81.40.Ef, 81.65.Mq