Study of Si-Implanted and Thermally Annealed Layers of Silicon by Using X-ray Grazing Incidence Methods
D. Klingera, M. Lefeld-Sosnowskab, J.B. Pełkaa, W. Paszkowicza, P. Gierłowskia and P. Pankowskia
aInstitute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
bInstitute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
Full Text PDF
This paper reports on the study of structural modifications induced by the implantation process and by the subsequent thermal annealing in near-surface layers of Si single crystals implanted with Si2+ ions of energy 140 keV and doses from 1x1015 to 1x1016 ions/cm2. The grazing incidence X-ray diffraction and X-ray reflectivity measurements were applied to determine the thickness and structural composition of the damaged layers. The fitted electron density profiles indicated an existence of an interfacial layer with density higher than the density of Si matrix or near-surface oxide layer. Formation of polycrystalline phases of silicon and silicon oxides is discussed in dependence on the conditions of annealing treatment and implantation dose.
DOI: 10.12693/APhysPolA.101.795
PACS numbers: 61.10.-i, 61.10.Kw, 61.72.Tt, 68.35.Fx, 81.40.Ef, 81.65.Mq