ACTA

Fine Diffraction Effects in Si Single Crystals Implanted with Fast Ar Ions and Annealed

D. Żymierska^a, K. Godwod^a, J. Adamczewska^a, J. Auleytner^a, J. Choiński^b and K. Regiński^c
^aInstitute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
^bHeavy Ion Laboratory of Warsaw University, Pasteura 5a, 02-093 Warsaw, Poland
^cInstitute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

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The paper presents high-resolution X-ray diffraction studies performed for Si single crystal: as-grown, implanted with a 5x10¹⁴ions cm^-2 dose of 3 MeV/n Ar ions, as well as implanted and annealed in a very high vacuum. The results are discussed on the basis of rocking curves and the mathematical analysis of the reciprocal space maps. It is shown that the lattice parameter is increased in an implanted part of the crystal, but long distance lattice curvature is not present. After annealing full relaxation of the crystal is stated.

DOI: 10.12693/APhysPolA.101.743
PACS numbers: 61.80.Jh, 61.80.-x, 61.10.-i, 85.40.Ry