Interference Fringes in the Plane Wave Topographic Images of Growth Bands in Si:Ge
K. Wieteskaa, W. Wierzchowskib, W. Graeffc, M. Lefeld-Sosnowskad and M. Regulskad
aInstitute of Atomic Energy, 05-400 Otwock-Świerk, Poland
bInstitute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
cHASYLAB at DESY, Notkestrasse 85, 22603 Hamburg, Germany
dInstitute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
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An Si:Ge crystal with approximately 3% of germanium was studied with strongly collimated short-wavelength monochromatic synchrotron beam (beamline E2 at HASYLAB). The topographs obtained in the asymmetric 224 reflection revealed the presence of interference fringes related to growth bands caused by segregation of germanium. The fringes, observed for the first time, were strongly dependent on the angular setting and it was possible to distinguish at least three systems of fringes. A number of features of the existing strain field, which may be important for the formation of the fringes, was determined using other topographic methods, especially the Bragg-case section topography.
DOI: 10.12693/APhysPolA.101.729
PACS numbers: 61.72.Ff