Oxygen Precipitation in Si:O Annealed under High Hydrostatic Pressure
A. Misiuka, J. B±k-Misiukb, L. Bryjac, J. K±tckia, J. Ratajczaka, J. Jund and B. Surmae
aInstitute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
bInstitute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
cWrocław University of Technology Wyb. Wyspiańskiego 27, 53-370 Wrocław, Poland
dHigh Pressure Research Centre, Polish Academy of Sciences Sokołowska 29/37, 01-142 Warsaw, Poland
eInstitute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
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Effect of hydrostatic pressure up to 1.2 GPa on oxygen-implanted silicon, Si:O (O+ dose, D, within the 6x1017-2x1018 cm-2 range), treated at 1230-1570 K, was investigated by X-ray, transmission electron microscopy and photoluminescence methods. The pressure treatment affects oxygen precipitation and defect creation, especially in low oxygen dose implanted Si:O (D=6x1017cm-2). Such investigation helps in understanding the stress related phenomena in Si wafers with buried insulating layer.
DOI: 10.12693/APhysPolA.101.719
PACS numbers: 61.10.-i, 61.72.Yx, 81.40.Vw