Dopants in Semiconductors Studied by Perturbed Angular Correlation |
| J. Bartels, K. Lorenz, F. Ruske, G. Tessema and R. Vianden Institut für Strahlen- und Kernphysik der Universität Bonn, 53115 Bonn, Germany |
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| The γ-γ perturbed angular correlation technique is a very powerful tool for the investigation of dopant incorporation and damage recovery after implantation in semiconductors. The basic principles of the technique will be introduced followed by a discussion of its strengths and limitations. Examples of its application will be given, ranging from cavities in silicon, effects of uniaxial stress on acceptor--donor pairs in silicon to damage recovery in nitride semiconductors like GaN. |
| DOI: 10.12693/APhysPolA.100.585 PACS numbers: 61.72.Vv, 61.72.Tt, 81.40.Ef, 76.80.+y |