PHOTOLUMINESCENCE OF Er3+ NEAR 1.54μm IN SILICON-RICH SILICON OXIDE FILMS

D. Kuritsyna, V. Glukchanyuka, H. Przybylińskaa, A. Kozaneckia and W. Jantschb aInstitute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland bInstitut für Halbleiterphysik, J. Kepler Universität, 4040 Linz, Austria

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Excitation of the intra- 4f-shell luminescence near 1.5μm in silicon-rich silicon oxide is studied. Silicon-rich silicon oxide was produced by high dose implantation of Si+ ions into SiO2 layers grown on silicon. Erbium doping was also performed using implantation of Er+ ions at an energy of 800keV. An evidence is presented that transfer of energy from defects related to excess silicon in silica is the dominant mechanism of excitation of Er3+ for optical pumping in the UV-blue wavelength range. Si-nanocrystals created by annealing at 1100°C rather compete for excitation with erbium than transfer energy to Er3+.

DOI: 10.12693/APhysPolA.100.437 PACS numbers: 61.72.Ww, 78.55.Hx