FROM LOCALISED TO BALLISTIC EXCITONS IN GAAS QUANTUM WELLS
F. Pulizzi, P.C.M. Christianen, J.C. Maan
High Field Magnet Laboratory, Research Institute for Materials University of Nijmegen, Toernooiveld 1, 6525ED Nijmegen, The Netherlands
S. Eshlaghi, D. Reuter and A.D. Wieck
Angewandte Festköperphysik, Ruhr-Universität Bochum, 44780 Bochum, Germany
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The lateral motion of excitons in GaAs quantum wells is studied by means of spatially resolved photoluminescence. We show that at low temperatures (4.2K) the exciton motion evolves from localised excitons (zero mobility) in thin quantum wells to extremely high mobilities in wide wells. We find that for the widest quantum well investigated the observed motion cannot be explained by simple exciton diffusion and must be explained by the propagation of ballistic exciton polaritons.
DOI: 10.12693/APhysPolA.100.397
PACS numbers: 71.35.--y, 71.36.+c