EFFECT OF HYDROGEN ON THE ELECTRONIC PROPERTIES OF GaAs1-yNy HETEROSTRUCTURES |
| M. Bissiri, V. Gaspari, G. Baldassarri H. v. H., F. Ranalli, A. Polimeni, M. Capizzi, A. Nucara INFM-Dip. di Fisica, Univ. di Roma "La Sapienza", 00185 Roma, Italy M. Geddo INFM-Dip. di Fisica, Univ. di Parma, 43010 Fontanini (Parma), Italy M. Fischer, M. Reinhardt and A. Forchel Universität Würzburg, Technische Physik, 97074 Würzburg, Germany |
| Full Text PDF |
| We have performed photoluminescence measurements in order to study the optical properties of hydrogenated GaAs1-yNy/GaAs heterostructures for y ranging from 0 to 0.03. Hydrogen irradiation leads to: (i) a progressive passivation of N-related recombination lines for low N content (y ~ 0.001); (ii) a sizable blue shift of the band gap in the "alloy" limit (y ~ 0.01). Thermal annealing restores the optical properties samples had before hydrogenation. These results can be accounted for by the formation of N---H+ complexes and demonstrate that hydrogen irradiation provides a powerful tool for the analysis of photoluminescence spectra of GaAs1-yNy. |
| DOI: 10.12693/APhysPolA.100.365 PACS numbers: 78.66.Fd, 71.55.Eq, 78.55.Cr |