Layered Semiconductors and Related Systems
H. Starnberg
Department of Physics, Göteborg University and Chalmers University of Technology, 412 96 Göteborg, Sweden
Full Text PDF
The general properties of the layered transition metal dichalcogenides and the possibility to modify these materials by intercalation are reviewed. Examples are given of experimental results obtained by using angle-resolved photoelectron spectroscopy and very-low-energy electron diffraction. The possibility to use layered semiconductors as model systems in studies of e.g. Schottky barriers and surface photovoltage is exemplified by the Rb/WSe2 system. Attention is also paid to the use of van der Waals epitaxy in interface studies, and its possible practical applications. The potential of layered semiconductors like WSe2 in solar cell applications is also mentioned.
DOI: 10.12693/APhysPolA.100.301
PACS numbers: 71.20.Nr, 71.20.Tx, 79.60.Bm, 79.60.Jv